At the IEEE IEDM conference, imec demonstrated record enhancement of novel InGaAs Gate-All-Around (GAA) channel devices integrated on 300mm silicon and explores emerging tunnel devices based on optimization of the same III-V compound semiconductor. III-V-on-Si GAA devices with a record peak transconductance at 0.5V has been achieved by optimizing both the channel epitaxy quality and the gate-channel passivation. In search of device technologies beyond FinFETs and GAA-nanowires for sub-0.5V op...